
T (+98) 23 352 20220
Email: international@du.ac.ir
Damghan University
University Blvd, Damghan, IR
Associate Professor of Electronic Engineering
Electronic Engineering
Semnan University, Semnan, Iran
Electronic Engineering
Semnan University, Semnan, Iran
Electronic Engineering
Semnan University, Semnan, Iran
DOI: 10.1109/ULIS.2018.8354776
AUTHOR KEYWORDS: Breakdown voltage; LDMOS; Specific on-resistance; Temperature
INDEX KEYWORDS: Electric breakdown; Heterojunction bipolar transistors; Metals; Oxide semiconductors; Semiconducting silicon; Semiconductor junctions; Silica; Silicon on insulator technology; Temperature; Transistors, Electrical parameter; Figure of merit (FOM); High breakdown voltage; Lateral double diffused MOSFET; Lateral double-diffused metal oxide semiconductors; Lattice temperatures; LDMOS; Specific-on resistance, MOS devices
PUBLISHER: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/TED.2017.2737531
AUTHOR KEYWORDS: Breakdown voltage; kink effect; lateral double-diffused MOSFET (LDMOS); on-resistance
INDEX KEYWORDS: Band structure; Electric breakdown; Heterojunction bipolar transistors; Impact ionization; MOSFET devices; Semiconductor junctions; Transport properties, Device performance; Energy-band diagram; High breakdown voltage; High voltage lateral double-diffused MOSFET; Kink effect; Lateral double diffused MOSFET; On-resistance; Specific-on resistance, MOS devices
PUBLISHER: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/ULIS.2017.7962572
AUTHOR KEYWORDS: drain current; Maximum lattice temperature; MOSFET; Short channel effect; SOI
INDEX KEYWORDS: Drain current; Silicon; Silicon on insulator technology; Threshold voltage, Lattice temperatures; Low-voltage applications; MOS-FET; Numerical results; Short-channel effect; Silicon windows; Subthreshold swing; Threshold voltage roll-off, MOSFET devices
PUBLISHER: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1149/2.0281704jss
INDEX KEYWORDS: Electron temperature; MOSFET devices; Nanotechnology, Device reliability; Drain region; Gate current; High temperature; Hot carrier effect; Off current; Oxide layer; Partial SOI, Electric fields
PUBLISHER: Electrochemical Society Inc.
DOI: 10.1007/s10825-015-0785-y
AUTHOR KEYWORDS: Breakdown voltage; Lateral double diffused MOSFET (LDMOS); Specific on-resistance
INDEX KEYWORDS: Electric breakdown; Electric fields; MOS devices; MOSFET devices; Semiconductor junctions; Silica, Drift regions; Electric field profiles; High breakdown voltage; Lateral double diffused MOSFET; LDMOS transistors; Specific-on resistance, Heterojunction bipolar transistors
PUBLISHER: Springer New York LLC
DOI: 10.1016/j.spmi.2015.12.041
AUTHOR KEYWORDS: Breakdown voltage; Lattice temperature; LDMOS; Reliability
INDEX KEYWORDS: Electric breakdown; Electric fields; Heterojunction bipolar transistors; MOS devices; Reliability, Conventional structures; Electric field profiles; High breakdown voltage; Lattice temperatures; LDMOS; LDMOS devices; LDMOS transistors; Low electron temperature, Periodic structures
PUBLISHER: Academic Press
DOI: 10.1149/2.0251612jss
INDEX KEYWORDS: Nanotechnology; Silicon on insulator technology; Thermal conductivity, Buried layer; Buried oxides; Effective mobilities; Insulator layer; Lattice temperatures; Self-heating effect; Silicon layer; Subthreshold swing, MOSFET devices
PUBLISHER: Electrochemical Society Inc.
DOI: 10.1016/j.physe.2015.09.016
AUTHOR KEYWORDS: Breakdown voltage; Channel; LDMOS; Specific on resistance
INDEX KEYWORDS: Electric breakdown; Electric fields; Heterojunction bipolar transistors; Semiconductor junctions, Channel; Depletion region; High breakdown voltage; High voltage applications; Horizontal electric fields; LDMOS; Novel structures; Specific-on resistance, MOS devices
PUBLISHER: Elsevier
DOI: 10.1149/2.0251609jss
INDEX KEYWORDS: MOS devices; Nanotechnology; Silicon on insulator technology; Threshold voltage, Active regions; Floating bodies; Floating body effect; Lattice temperatures; Nanoscale device; NanoScale Transistors; Short-channel effect; Subthreshold swing, MOSFET devices
PUBLISHER: Electrochemical Society Inc.
DOI: 10.1149/2.0231607jss
INDEX KEYWORDS: Drain current; Field effect transistors; Nanostructured materials; Nanotechnology; Threshold voltage, Device performance; Doping concentration; Drain region; NanoScale Transistors; Off current; Short-channel effect; SOI-MOSFETs; Subthreshold slope, MOSFET devices
PUBLISHER: Electrochemical Society Inc.
DOI: 10.1016/j.mssp.2014.11.017
AUTHOR KEYWORDS: Breakdown voltage; LDMOS; Maximum lattice temperature; Mobility
INDEX KEYWORDS: Atmospheric temperature; Carrier mobility; Electric breakdown; Electric insulators; Heterojunction bipolar transistors; Metallic compounds; MOS devices; Power electronics; Semiconducting silicon; Silicon; Thermal conductivity; Transistors, High breakdown voltage; High-temperature power; Lateral double-diffused metal oxide semiconductors; Lattice temperatures; LDMOS; Metal oxide semiconductor; Siliconon-insulator technology (SOI); Surface temperatures, Silicon on insulator technology
PUBLISHER: Elsevier Ltd
DOI: 10.1016/j.spmi.2015.06.023
AUTHOR KEYWORDS: Floating body effect; Lattice temperature; Parasitic BJT; SOI
INDEX KEYWORDS: BiCMOS technology; Energy gap; Heterojunction bipolar transistors; MOSFET devices; Nanotechnology; Silicon on insulator technology, Effective mobilities; Floating body effect; Lattice temperatures; Parasitic BJT; Self-heating effect; Silicon Germanium; SOI; Subthreshold swing, Silicon alloys
PUBLISHER: Academic Press
DOI: 10.1016/j.mssp.2015.02.057
AUTHOR KEYWORDS: Breakdown voltage; LDMOS; Self-heating effects; SOI
INDEX KEYWORDS: BiCMOS technology; Electric breakdown; Electric fields; Heterojunction bipolar transistors; Silicon; Silicon on insulator technology, Buried oxide layers; Depletion region; High breakdown voltage; Lattice temperatures; LDMOS; LDMOS transistors; Self-heating effect; SOI, MOS devices
PUBLISHER: Elsevier Ltd
DOI: 10.1016/j.spmi.2014.05.002
AUTHOR KEYWORDS: Analytical model; Breakdown voltage; Electric field; RESURF
INDEX KEYWORDS: Analytical models; Electric breakdown; Electric fields; Numerical models; Two dimensional; Analytical models; Electric breakdown; Electric fields; Electric insulators; Numerical models; Poisson equation; Silicon; Surface potential, Analytical results; Buried oxides; Interface charge; Positive charges; Reduced surface field (RESURF); RESURF; Siliconon-insulator technology (SOI); Surface electric fields, Electric insulators; Silicon on insulator technology
PUBLISHER: Academic Press