
T (+98) 23 352 20220
Email: international@du.ac.ir
Damghan University
University Blvd, Damghan, IR
Assistant Professor of Electronic Engineering
Electronic Engineering
Semnan University, Semnan, Iran
Electronic Engineering
Semnan University, Semnan, Iran
Electronic Engineering
Semnan University, Semnan, Iran
DOI: 10.1016/j.spmi.2018.10.019
AUTHOR KEYWORDS: Breakdown voltage; LDMOS transistor; Semicnductor devices; Silicon on insulator; Specific on-resistance
INDEX KEYWORDS: Economic and social effects; Electric breakdown; Electric insulators; MOS devices; MOSFET devices; Semiconductor junctions; Silica; Silicon on insulator technology, Design considerations; Doping densities; Electrical characteristic; Figure of merits; LDMOS transistors; Semicnductor devices; Silicon dioxide layers; Specific-on resistance, Power semiconductor devices
PUBLISHER: Academic Press
DOI: 10.1109/ULIS.2018.8354777
AUTHOR KEYWORDS: Breakdown voltage; Lateral Double diffused Metal Oxide Field Effect Transistor; Lattice temprature; Silicon On Insulator
INDEX KEYWORDS: Electric breakdown; Electric insulators; Metallic compounds; Metals; MOS devices; MOSFET devices; Oxide semiconductors; Power semiconductor devices; Semiconductor junctions; Transistors, Figure of merit (FOM); Lateral double-diffused metal oxide; Lateral double-diffused metal oxide semiconductors; Lattice temperatures; Lattice temprature; P type and N types; Power applications; Specific-on resistance, Silicon on insulator technology
PUBLISHER: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/TED.2017.2737531
AUTHOR KEYWORDS: Breakdown voltage; kink effect; lateral double-diffused MOSFET (LDMOS); on-resistance
INDEX KEYWORDS: Band structure; Electric breakdown; Heterojunction bipolar transistors; Impact ionization; MOSFET devices; Semiconductor junctions; Transport properties, Device performance; Energy-band diagram; High breakdown voltage; High voltage lateral double-diffused MOSFET; Kink effect; Lateral double diffused MOSFET; On-resistance; Specific-on resistance, MOS devices
PUBLISHER: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/ULIS.2017.7962563
AUTHOR KEYWORDS: Floating body effect; Maximum lattice temprature; MOSFET; SOI
INDEX KEYWORDS: Heat transfer; Silicon; Silicon on insulator technology; Substrates, Current capability; Depletion region; Electrical performance; Floating body effect; Lattice temperatures; Maximum lattice temprature; MOS-FET; Nano-meter regimes, MOSFET devices
PUBLISHER: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1149/2.0101707jss
INDEX KEYWORDS: Hafnium oxides; High temperature applications; Metals; MOS devices; MOSFET devices; Problem solving; Silicon on insulator technology; Threshold voltage; Transistors, Buried oxides; Channel region; Device performance; Electronic industries; Hot carrier effect; Self-heating; Short-channel effect; Source region, Field effect transistors
PUBLISHER: Electrochemical Society Inc.
DOI: 10.1149/2.0281704jss
INDEX KEYWORDS: Electron temperature; MOSFET devices; Nanotechnology, Device reliability; Drain region; Gate current; High temperature; Hot carrier effect; Off current; Oxide layer; Partial SOI, Electric fields
PUBLISHER: Electrochemical Society Inc.
DOI: 10.1016/j.spmi.2016.11.022
AUTHOR KEYWORDS: Floating body effect; Metal Oxide Semiconductor Field Effect Transistor; Self heating effect; Short channel effects; Silicon On Insulator
INDEX KEYWORDS: Dielectric devices; Diodes; Electric breakdown; Electron beam lithography; Field effect transistors; Metallic compounds; Metals; MOS devices; Nanotechnology; Oxide semiconductors; Semiconducting silicon; Semiconductor diodes; Silicon on insulator technology; Threshold voltage; Transistors; Tunnel diodes, Buried oxide layers; Electrical characteristic; Electronic industries; Floating body effect; Lattice temperatures; Self-heating effect; Short-channel effect; Subthreshold slope, MOSFET devices
PUBLISHER: Academic Press
DOI: 10.1007/s10825-015-0785-y
AUTHOR KEYWORDS: Breakdown voltage; Lateral double diffused MOSFET (LDMOS); Specific on-resistance
INDEX KEYWORDS: Electric breakdown; Electric fields; MOS devices; MOSFET devices; Semiconductor junctions; Silica, Drift regions; Electric field profiles; High breakdown voltage; Lateral double diffused MOSFET; LDMOS transistors; Specific-on resistance, Heterojunction bipolar transistors
PUBLISHER: Springer New York LLC
DOI: 10.1149/2.0151610jss
INDEX KEYWORDS: Drain current; Nanotechnology; Silica; Silicon on insulator technology; Silicon oxides; Thermal conductivity, Active regions; Channel region; Different layers; Electrical characteristic; Floating body effect; Maximum temperature; Self-heating effect; Silicon windows, MOSFET devices
PUBLISHER: Electrochemical Society Inc.
DOI: 10.1149/2.0231607jss
INDEX KEYWORDS: Drain current; Field effect transistors; Nanostructured materials; Nanotechnology; Threshold voltage, Device performance; Doping concentration; Drain region; NanoScale Transistors; Off current; Short-channel effect; SOI-MOSFETs; Subthreshold slope, MOSFET devices
PUBLISHER: Electrochemical Society Inc.
DOI: 10.1016/j.spmi.2015.09.017
AUTHOR KEYWORDS: Electric field; Hot carrier effect; Si3N4 layer; SOI-MOSFET
INDEX KEYWORDS: Electric fields; Energy gap; High temperature applications; Hot carriers; Nanotechnology; Silicon; Silicon on insulator technology, Buried oxides; Channel region; High temperature; Hot carrier effect; Lattice temperatures; SOI-MOSFETs; Subthreshold slope; Uniform electric fields, MOSFET devices
PUBLISHER: Academic Press
AUTHOR KEYWORDS: Control place; Discrete event system; Integer linear programming problem; Petri net; Supervisory control
PUBLISHER: Control Engineering and Applied Informatics Journal